MMG200D120B6UC Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG200D120B6UC
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1071 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 291 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 58 nS
Qgⓘ - Общий заряд затвора, typ: 1000 nC
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MMG200D120B6UC Datasheet (PDF)
mmg200d120b6uc.pdf

MMG200D120B6UC1200V 200A IGBT ModuleApril 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inverte
mmg200d120b6un.pdf

MMG200D120B6UN 1200V 200A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA
mmg200d120b6tc.pdf

MMG200D120B6TC1200V 200A IGBT ModuleJuly 2020 Version 02 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switch
mmg200d120b6hn.pdf

MMG200D120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
Другие IGBT... MMG150W120X6TC , MMG150WB170H6EN , MMG150WJ120XB6TC , MMG15CB120X6TC , MMG15CB120XB6TC , MMG15CB120XB6TN , MMG200B065PD6EN , MMG200D120B6TC , SGT40N60FD2PN , MMG200D120UA6TC , MMG200D120UA6TN , MMG200D120UK6TN , MMG200D170B , MMG200D170B6TC , MMG200Q120B6TC , MMG200Q120UA6TC , MMG200S060B6TC .
History: BSM50GP60
History: BSM50GP60



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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