MMG25H120XT6TC Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG25H120XT6TC
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 157 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 39 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 40 nS
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MMG25H120XT6TC Datasheet (PDF)
mmg25h120xt6tc.pdf

MMG25H120XT6TC1200V 25A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to integrated Mounting
mmg25h120xb6tc.pdf

MMG25H120XB6TC1200V 25A PIM ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES Substrate for Low Thermal Resistance Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Solder Contact Technology, Rugged mounting due to integrated Mounting clamps Tem
mmg25h120x6tn.pdf

MMG25H120X6TN1200V 25A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated
mmg25h120xb6tn.pdf

MMG25H120XB6TN1200V 25A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base
Другие IGBT... MMG200D170B6TC , MMG200Q120B6TC , MMG200Q120UA6TC , MMG200S060B6TC , MMG200S060DE6EN , MMG200W060X6EN , MMG25CE120XB6TC , MMG25H120XB6TC , IKW30N60H3 , MMG25HD120XB6TC , MMG25HD120XT6TC , MMG300B065PD6EN , MMG300B065PD6TC , MMG300D060B6TC , MMG300D060DE6EN , MMG300D120B6TC , MMG300D120B6UC .
History: STGD10NC60KD | ISL9V2040S3S | IXYH50N65C3 | APT45GP120B2DF2 | DF160R12W2H3_B11 | VS-GB100TP120U | VS-GA250SA60S
History: STGD10NC60KD | ISL9V2040S3S | IXYH50N65C3 | APT45GP120B2DF2 | DF160R12W2H3_B11 | VS-GB100TP120U | VS-GA250SA60S



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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