MMG50S170B Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG50S170B
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 395 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.4 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 70 nS
Qgⓘ - Общий заряд затвора, typ: 450 nC
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MMG50S170B Datasheet (PDF)
mmg50s170b.pdf

MMG50S170B1700V 50A IGBT ModuleJuly 2016 Preliminary RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Mot
mmg50s170b6tc.pdf

MMG50S170B6TC1700V 50A IGBT ModuleOctober 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Motion/servo co
mmg50s170b6en.pdf

MMG50S170B6EN1700V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switching applica
mmg50s120b6hn.pdf

MMG50S120B6HN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss
Другие IGBT... MMG50H120X6TC , MMG50HD120XB6T4N , MMG50HD120XB6TC , MMG50HD120XT6TC , MMG50J120UZ6TC , MMG50S120B6TC , MMG50S120B6UC , MMG50S120UA6TN , GT50JR22 , MMG50S170B6TC , MMG50W060XB6EN , MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC .



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a