Справочник IGBT. MMGT100WD120XB6C

 

MMGT100WD120XB6C - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMGT100WD120XB6C
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 576 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.75 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 75 nS
   Тип корпуса: MODULE

 Аналог (замена) для MMGT100WD120XB6C

 

 

MMGT100WD120XB6C Datasheet (PDF)

 0.1. Size:430K  macmic
 mmgt100wd120xb6c.pdf

MMGT100WD120XB6C MMGT100WD120XB6C

MMGT100WD120XB6C1200V 100A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

 6.1. Size:371K  macmic
 mmgt100w120x6c.pdf

MMGT100WD120XB6C MMGT100WD120XB6C

MMGT100W120X6C1200V 100A Six-Pack ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop

 7.1. Size:260K  macmic
 mmgt100j120uz6c.pdf

MMGT100WD120XB6C MMGT100WD120XB6C

MMGT100J120UZ6C1200V 100A IGBT ModuleNovember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175APPLICATIONS AC motor control Motion/servo control Inver

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