RJH3044 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJH3044
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc): 20
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 360
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.5
Максимально допустимое напряжение эмиттер-затвор (Ueg): 30
Максимальный постоянный ток коллектора (Ic): 30
Максимальная температура перехода (Tj): 150
Тип корпуса: TO220FL
RJH3044 Datasheet (PDF)
..1. rjh3044.pdf Size:20K _1
RJH3044 absolute maximum ratings: (1) Collector to emitter voltage VCES: 360 V (2) Gate to emitter voltage VGES: 30 V (3) Collector current IC: 30 A (4) Collector peak current ic(peak): 200 A (5) Collector to emitter diode Forward peak current iDF(peak): 100 A (6) Collector dissipation PC: 20 W (7) Junction to case thermal impedance qj-c: 6.25 'CW (8) Junction temperature Tj:
9.1. r07ds0463ej rjh30h1dpp.pdf Size:152K _renesas
Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
9.2. rjh30h1dpp-m0.pdf Size:131K _renesas
Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
9.3. r07ds0464ej rjh30h2dpk.pdf Size:152K _renesas
Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
9.4. rjh30h2dpk-m0.pdf Size:130K _renesas
Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
9.5. rjp30e2dpp-equivalent for rjh30e2 without diode.pdf Size:152K _renesas
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
Другие IGBT... 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , AOK60B60D1 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B .



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Обновления
IGBT: TGH60N65F2DS | TGH60N65F2DR | TGH40N65F2DS | TGH40N65F2DR | TGH40N60F2D | TGH40N135FD | TGH40N120F2DR | TGAN80N65F2DS | TGAN80N60F2DS | TGAN60N65F2DS | TGAN60N65F2DR