RJH3044 Даташит. Аналоги. Параметры и характеристики.
Наименование: RJH3044
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 360 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 80 nS
Тип корпуса: TO220FL
Аналог (замена) для RJH3044
RJH3044 Datasheet (PDF)
rjh3044.pdf

RJH3044 absolute maximum ratings: (1) Collector to emitter voltage VCES: 360 V (2) Gate to emitter voltage VGES: 30 V (3) Collector current IC: 30 A (4) Collector peak current ic(peak): 200 A (5) Collector to emitter diode Forward peak current iDF(peak): 100 A (6) Collector dissipation PC: 20 W (7) Junction to case thermal impedance qj-c: 6.25 'CW (8) Junction temperature Tj:
r07ds0464ej rjh30h2dpk.pdf

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
r07ds0463ej rjh30h1dpp.pdf

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
rjp30e2dpp rjh30e2 equivalent no diode.pdf

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
Другие IGBT... 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , IRG4PC50UD , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B .
History: RJH60V1BDPP-M0 | RJH1CF4RDPQ-80 | IRGB4059DPBF | APTGT100A120D1 | APTGS75X170TE3 | FGHL75T65LQDT | SKM100GB12V
History: RJH60V1BDPP-M0 | RJH1CF4RDPQ-80 | IRGB4059DPBF | APTGT100A120D1 | APTGS75X170TE3 | FGHL75T65LQDT | SKM100GB12V



Список транзисторов
Обновления
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