RJH3044 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJH3044
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 20
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 360
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 80
Тип корпуса: TO220FL
RJH3044 Datasheet (PDF)
rjh3044.pdf
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RJH3044 absolute maximum ratings: (1) Collector to emitter voltage VCES: 360 V (2) Gate to emitter voltage VGES: 30 V (3) Collector current IC: 30 A (4) Collector peak current ic(peak): 200 A (5) Collector to emitter diode Forward peak current iDF(peak): 100 A (6) Collector dissipation PC: 20 W (7) Junction to case thermal impedance qj-c: 6.25 'CW (8) Junction temperature Tj:
r07ds0464ej rjh30h2dpk.pdf
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Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
r07ds0463ej rjh30h1dpp.pdf
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Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
rjp30e2dpp rjh30e2 equivalent no diode.pdf
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Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
rjh30h2dpk-m0.pdf
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Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
rjh30h1dpp-m0.pdf
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Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
Другие IGBT... 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , GT30F126 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B .
![RJH3044](https://alltransistors.com/images/us.png)
![RJH3044](https://alltransistors.com/images/es.png)
![RJH3044](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ