NCE15TD60BD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NCE15TD60BD
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 105
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 12
Емкость коллектора типовая (Cc), pf: 50
Общий заряд затвора (Qg), typ, nC: 63
Тип корпуса: TO263
Аналог (замена) для NCE15TD60BD
NCE15TD60BD Datasheet (PDF)
nce15td60bd nce15td60b nce15td60bf.pdf
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PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce15td60bd nce15td60b nce15td60bf.pdf
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PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce15td60b.pdf
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PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch
nce15td120bt.pdf
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PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce1579c.pdf
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Pb Free Producthttp://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce1540ka.pdf
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http://www.ncepower.com NCE1540KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce1503s.pdf
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http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
nce15p25j.pdf
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http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15h10.pdf
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http://www.ncepower.comNCE15H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.General FeaturesSchematic diagram V =150V,I =100ADS DR
nce15h10a.pdf
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Pb Free Producthttp://www.ncepower.comNCE15H10ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10A uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =150V,I =100A Schematic diagramDS DR
nce1520.pdf
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Pb Free Producthttp://www.ncepower.com NCE1520NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce1520k.pdf
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Pb Free Producthttp://www.ncepower.com NCE1520KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce15h15t.pdf
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Pb Free Producthttp://www.ncepower.com NCE15H15TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)
nce1540af.pdf
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http://www.ncepower.comNCE1540AFNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1540AF uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =150V,I =20ADS DR
nce1505s.pdf
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Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
nce1540ad.pdf
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Pb Free Producthttp://www.ncepower.com NCE1540ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce1570.pdf
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Pb Free Producthttp://www.ncepower.com NCE1570NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)
nce1507ak.pdf
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http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
nce15p30.pdf
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http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce1550f.pdf
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Pb Free Producthttp://www.ncepower.com NCE1550FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce1579c.pdf
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http://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce1520ka.pdf
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Pb Free Producthttp://www.ncepower.com NCE1520KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
nce15p25i.pdf
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http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce1502r.pdf
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Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
nce1550.pdf
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Pb Free Producthttp://www.ncepower.com NCE1550NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce15p25jk.pdf
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NCE15P25JK http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce1504r.pdf
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http://www.ncepower.com NCE1504RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
nce15p25ji.pdf
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http://www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce1512ia.pdf
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Pb Free Producthttp://www.ncepower.com NCE1512IANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE1512IA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID =12A RDS(ON)
nce15p25.pdf
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http://www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15p30k.pdf
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http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce1540k.pdf
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Pb Free Producthttp://www.ncepower.com NCE1540KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![NCE15TD60BD](https://alltransistors.com/images/us.png)
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Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ