HM20N120TB - аналоги и описание IGBT

 ..1. Size:808K  cn hmsemi
 hm20n120tb.pdf 

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Sym

 5.1. Size:962K  cn hmsemi
 hm20n120t.pdf 

HM20N120T Typical Performance Characteristics Figure1 maximum DC collector current Figure2 power dissipation VS. case temprature VS. case temprature Figure3 forward SOA,TC=25 ,TJ 150 Figure4 reverse bias SOA,TJ=150 ,VGE=15V - 3 - Rev1.1 November. 2011 Shenzhen H&M Semiconductor Co.Ltd http //www.hmsemi.com HM20N120T Figure5 typical IGBT output characteristics, Fi

 6.1. Size:798K  cn hmsemi
 hm20n120ab.pdf 

IGBT Features 1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms General Description KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications. Absolute Maximum Ratings Symbol

 8.1. Size:830K  cn hmsemi
 hm20n15a.pdf 

HM20N15A N-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 8.2. Size:394K  cn hmsemi
 hm20n15.pdf 

HM20N15 NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 8.3. Size:620K  cn hmsemi
 hm20n15ka.pdf 

HM20N15KA N-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

 8.4. Size:877K  cn hmsemi
 hm20n15d.pdf 

HM20N15D N-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

 8.5. Size:517K  cn hmsemi
 hm20n15k.pdf 

HM20N15K Description The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)