Справочник IGBT. DGTD65T40S2PT

 

DGTD65T40S2PT - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: DGTD65T40S2PT
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 230
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 36
   Емкость коллектора типовая (Cc), pf: 120
   Общий заряд затвора (Qg), typ, nC: 60
   Тип корпуса: TO247

 Аналог (замена) для DGTD65T40S2PT

 

 

DGTD65T40S2PT Datasheet (PDF)

 ..1. Size:1340K  diodes
 dgtd65t40s2pt.pdf

DGTD65T40S2PT DGTD65T40S2PT

DGTD65T40S2PT Green650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/s C EOFF = 0.4mJ @ TC = +25 Ma

 7.1. Size:1639K  diodes
 dgtd65t50s1pt.pdf

DGTD65T40S2PT DGTD65T40S2PT

DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/s Eoff = 0.55mJ @ TC=25C

 7.2. Size:1787K  diodes
 dgtd65t15h2tf.pdf

DGTD65T40S2PT DGTD65T40S2PT

DGTD65T15H2TF Green650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi

 7.3. Size:1584K  diodes
 dgtd65t60s2pt.pdf

DGTD65T40S2PT DGTD65T40S2PT

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low

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