CRG40T65AK5H,CRG40T65AN5H CRG40T65AK5H, CRG40T65AN5H FS VCES 650 V IGBT IC 40 A RoHS Ptot TC=25 250 W VCE(sat) 1.65 V TO-247 FS

CRG40T65AK5HD,CRG40T65AN5HD CRG40T65AK5HD, CRG40T65AN5HD FS VCES 650 V IGBT IC 40 A RoHS Ptot TC=25 250 W VCE(sat) 1.65 V TO-247 FS

CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3PN FS VCE(sat

CRG40T60AN3HD, CRG40T60AK3HD CRG40T60AN3HD CRG40T60AK3HD VCES 600 V FS IGBT IC 40 A RoHS Ptot TC=25 336 W VCE(sat) 1.9 V TO-3PN FS

CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati

Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati