CRG40T65AK5HD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: CRG40T65AK5HD
Тип транзистора: IGBT
Маркировка: G40T65AK5HD
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 50 nS
Coesⓘ - Выходная емкость, типовая: 119 pF
Qgⓘ - Общий заряд затвора, typ: 97 nC
Тип корпуса: TO247
Аналог (замена) для CRG40T65AK5HD
CRG40T65AK5HD Datasheet (PDF)
crg40t65ak5hd crg40t65an5hd.pdf
CRG40T65AK5HD,CRG40T65AN5HD CRG40T65AK5HD, CRG40T65AN5HD FS VCES 650 V IGBT IC 40 A RoHS Ptot TC=25 250 W VCE(sat) 1.65 V TO-247 FS
crg40t65ak5h crg40t65an5h.pdf
CRG40T65AK5H,CRG40T65AN5H CRG40T65AK5H, CRG40T65AN5H FS VCES 650 V IGBT IC 40 A RoHS Ptot TC=25 250 W VCE(sat) 1.65 V TO-247 FS
crg40t60an3h.pdf
CRG40T60AN3H CRG40T60AN3H FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.9 V TO-3PN FS VCE(sat
crg40t60an3hd crg40t60ak3hd.pdf
CRG40T60AN3HD, CRG40T60AK3HD CRG40T60AN3HD CRG40T60AK3HD VCES 600 V FS IGBT IC 40 A RoHS Ptot TC=25 336 W VCE(sat) 1.9 V TO-3PN FS
crg40t60ak3sd.pdf
CRG40T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low sat
crg40t60an3h.pdf
Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturati
crg40t60ak3hd.pdf
Silicon FS Trench IGBT CRG40T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 336 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati
crg40t60ak3h.pdf
Silicon FS Trench IGBT CRG40T60AK3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 247 Features FS Trench Technology, Positive temperature coefficient Low saturati
Другие IGBT... CRG25T120BK3S , CRG40T120AK3S , CRG40T120AK3SD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , IRG7IC28U , CRG40T65AN5HD , CRG60T60AK3HD , CRG75T60AK3HD , CRG75T65AK5HD , CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2