SPT15N120T1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SPT15N120T1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 208
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.8
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 21
Емкость коллектора типовая (Cc), pf: 70
Общий заряд затвора (Qg), typ, nC: 137
Тип корпуса: TO247
Аналог (замена) для SPT15N120T1
SPT15N120T1 Datasheet (PDF)
spt15n120t1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab
spt15n120t1t8tl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s
spt15n120f1t8tl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes
spt15n120f1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: CRG08T60A83L
History: CRG08T60A83L
![SPT15N120T1](https://alltransistors.com/images/us.png)
![SPT15N120T1](https://alltransistors.com/images/es.png)
![SPT15N120T1](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ