NCE07TD60BD - аналоги, основные параметры, даташиты
Наименование: NCE07TD60BD
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 73 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 12 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 22 pF
Тип корпуса: TO263
Аналог (замена) для NCE07TD60BD
- подбор ⓘ IGBT транзистора по параметрам
NCE07TD60BD даташит
nce07td60bd.pdf
Pb Free Product NCE07TD60BD 600V, 7A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce07td60bf nce07td60bd nce07td60b.pdf
PbFreeProduct NCE07TD60BF,NCE07TD60BD,NCE07TD60B 600V, 7A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce07td60bi.pdf
Pb Free Product NCE07TD60BI 600V, 7A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce07td60bk.pdf
Pb Free Product NCE07TD60BK 600V, 7A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
Другие IGBT... YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI , NCE07TD60BF , RJH60F7BDPQ-A0 , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD , NCE10TD60B , NCE10TD60BK , NCE15TD120BT .
History: NCE07T60BI
History: NCE07T60BI
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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