NCE20TD60BD Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE20TD60BD
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 135 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 16 nS
Coesⓘ - Выходная емкость, типовая: 48 pF
Тип корпуса: TO263
- подбор IGBT транзистора по параметрам
NCE20TD60BD Datasheet (PDF)
nce20td60bd nce20td60b nce20td60bf.pdf

PbFreeProduct NCE20TD60BD,NCE20TD60B,NCE20TD60BF 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce20td60bd.pdf

Pb Free ProductNCE20TD60BD600V, 20A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce20td60bp.pdf

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce20td60bt.pdf

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
Другие IGBT... NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD , NCE10TD60B , NCE10TD60BK , NCE15TD120BT , GT30F132 , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT .
History: APTGF330DA60D3 | MMG150S120B6TN | SGT20T60SD1T | GT80J101 | APTLGF210U120T | BLG40T120FUH-F | APTGF25X120E2
History: APTGF330DA60D3 | MMG150S120B6TN | SGT20T60SD1T | GT80J101 | APTLGF210U120T | BLG40T120FUH-F | APTGF25X120E2



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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