NCE25TD135LT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE25TD135LT
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 365 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1350 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 72 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
NCE25TD135LT Datasheet (PDF)
nce25td135lt.pdf

PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td135lp.pdf

PbFreeProduct NCE25TD135LP 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120lp.pdf

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120w.pdf

Pb Free ProductNCE25TD120W1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGP4N100 | SKM50GB12V | IXGT40N60C2 | IXXH100N60C3 | NCE20TD60BP | APT25GP90BDF1 | IRGIB15B60KD1P
History: IXGP4N100 | SKM50GB12V | IXGT40N60C2 | IXXH100N60C3 | NCE20TD60BP | APT25GP90BDF1 | IRGIB15B60KD1P



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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