NCE30TH60BP - Даташиты. Аналоги. Основные параметры
Наименование: NCE30TH60BP
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 183 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 106 pF
Тип корпуса: TO3PNT
Аналог (замена) для NCE30TH60BP
NCE30TH60BP Datasheet (PDF)
nce30th60bp.pdf
PbFreeProduct NCE30TH60BP 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw
nce30td60bp.pdf
Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td120ut.pdf
PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce30td60bd.pdf
PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed
Другие IGBT... NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , GT60N321 , NCE40TD120BT , NCE40TD120VT , NCE40TD120VTP , NCE40TD120WT , NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP .
History: SKM195GAR063DN | JT050N120F2MA1E | NCE30TD65BD | NCE20TH60BF | SMBH1G50US120 | MSG30T65FHT | 6MBP30VAA060-50
History: SKM195GAR063DN | JT050N120F2MA1E | NCE30TD65BD | NCE20TH60BF | SMBH1G50US120 | MSG30T65FHT | 6MBP30VAA060-50
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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