NCE40TD120WT - аналоги, основные параметры, даташиты
Наименование: NCE40TD120WT
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 468 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 185 pF
Тип корпуса: TO247
Аналог (замена) для NCE40TD120WT
- подбор ⓘ IGBT транзистора по параметрам
NCE40TD120WT даташит
nce40td120wt.pdf
PbFreeProduct NCE40TD120WT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce40td120ww.pdf
Pb Free Product NCE40TD120WW 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce40td120bt.pdf
PbFreeProduct NCE40TD120BT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce40td120vt.pdf
PbFreeProduct NCE40TD120VT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
Другие IGBT... NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , NCE40TD120VT , NCE40TD120VTP , GT30F125 , NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP , NCE60TD60BT , NCE75TD120VTP .
History: IXSH24N60BD1 | ISL9V3040S3ST-F085C | NCE40TD60BP | SME6G30US60 | BG150B12UY3-I | IXXH50N60B3 | BG150B12LY2-I
History: IXSH24N60BD1 | ISL9V3040S3ST-F085C | NCE40TD60BP | SME6G30US60 | BG150B12UY3-I | IXXH50N60B3 | BG150B12LY2-I
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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