NCE80TD60BP - аналоги, основные параметры, даташиты
Наименование: NCE80TD60BP
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 390 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 160 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 258 pF
Тип корпуса: TO3P
Аналог (замена) для NCE80TD60BP
- подбор ⓘ IGBT транзистора по параметрам
NCE80TD60BP даташит
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
nce80td60bp.pdf
Pb Free Product NCE80TD60BP 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce80td60bt.pdf
Pb Free Product NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
Другие IGBT... NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP , NCE60TD60BT , NCE75TD120VTP , NCE75TS120VTP , IRGB20B60PD1 , NCE80TD60BT , STGB10M65DF2 , STGB10NC60KDT4 , STGD10NC60KDT4 , STGB14NC60KDT4 , STGB15M65DF2 , STGB19NC60HDT4 , STGB19NC60KDT4 .
History: SKM150GAL123D
History: SKM150GAL123D
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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