STGB20H65DFB2 - аналоги и описание IGBT

STGB20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a D PAK package Features TAB Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A 2 3 Very fast and soft recovery co-packaged diode 1 Minimized tail current D PAK Tight parameter distribution Low thermal resistance C(2, TAB)

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 Safe paralleling 3 2 2 1 1 Low thermal resistance TO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diode TAB Applications 3 1 Motor contr

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature TJ = 175 C Very high speed switching series TAB TAB Tail-less switching off Low saturation voltage VCE(sat) = 1.8 V (typ.) @ IC = 20 A 3 3 Tight parameters distribution 2 1 1 Safe paralleling D2PAK TO-

STGB20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features TAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution 2 3 Safer paralleling 1 Low thermal resistance D PAK Soft and very fast recovery antiparallel diode C(2, TAB) Applications Motor control UPS G(1)

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED

STGB20NC60V, STGP20NC60V, STGW20NC60V 30 A - 600 V - very fast IGBT Datasheet - production data Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 3 3 2 2 1 1 Applications TO-247 TO-220 3 1 High frequency inverters UPS, motor drivers D PAK HF, SMPS and PFC in both hard

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature TJ = 175 C Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage VCE(sat) = 1.8 V (typ.) TO-220 D PAK @ IC = 20 A TAB Tight paramete

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED

STGB20NB41LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB41LZ CLAMPED

STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 High frequency inverters UPS, motor drivers D PAK HF, SMPS and PFC in both hard switch and resonant topologi

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB37LZ CLAMPED