Аналоги STGWA75H65DFB2. Основные параметры
Наименование: STGWA75H65DFB2
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 357
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 650
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
115
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.55
V @25℃
Tj ⓘ - Максимальная температура перехода:
175
℃
tr ⓘ -
Время нарастания типовое: 16
nS
Coesⓘ - Выходная емкость, типовая: 264
pF
Тип корпуса:
TO247
Аналог (замена) для STGWA75H65DFB2
-
подбор ⓘ IGBT транзистора по параметрам
STGWA75H65DFB2 даташит
..1. Size:555K st
stgwa75h65dfb2.pdf 

STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp
7.1. Size:1019K st
stgw75m65df2 stgwa75m65df2.pdf 

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi
9.1. Size:526K st
stgwa40h65dfb.pdf 

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist
9.2. Size:537K st
stgwa50hp65fb2.pdf 

STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien
9.3. Size:431K st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf 

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio
9.4. Size:699K st
stgwa40h120df2.pdf 

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 TO
9.5. Size:698K st
stgwa25s120df3.pdf 

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long le
9.6. Size:993K st
stgwa50m65df2.pdf 

STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.65 V (typ.) @ I = 50 A CE(sat) C Tight parameters distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft
9.7. Size:419K st
stgwa30n120kd.pdf 

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short
9.8. Size:517K st
stgwa19nc60hd.pdf 

STGWA19NC60HD 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Applications 3 2 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-247 resonant topologies Description This device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin
9.9. Size:952K st
stgwa25h120f2.pdf 

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Tight parameters distribution
9.10. Size:1030K st
stgw40m120df3 stgwa40m120df3.pdf 

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.11. Size:819K st
stgw40h120df2 stgwa40h120df2.pdf 

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very
9.12. Size:1471K st
stgwa80h65fb.pdf 

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low
9.13. Size:523K st
stgwa20m65df2.pdf 

STGWA20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode C (2) Applications Motor control UPS PFC G (1) General-purp
9.14. Size:1046K st
stgwa25m120df3.pdf 

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.15. Size:827K st
stgwa15h120df2.pdf 

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T
9.16. Size:539K st
stgwa20h65dfb2.pdf 

STGWA20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te
9.17. Size:321K st
stgwa30ih65df.pdf 

STGWA30IH65DF Datasheet Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft commutation only Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa
9.18. Size:685K st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf 

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral
9.19. Size:1625K st
stgw60v60df stgwa60v60df stgwt60v60df.pdf 

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A 3 3 2 2 1 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistan
9.20. Size:1049K st
stgwa15m120df3.pdf 

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.21. Size:796K st
stgwa15h120f2.pdf 

STGW15H120F2, STGWA15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Safe paralleling TO-247 TO-2
9.22. Size:1031K st
stgwa40m120df3.pdf 

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.23. Size:779K st
stgwa60nc60wdr.pdf 

STGWA60NC60WDR 60 A, 600 V, ultrafast IGBT Features Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode 3 2 Applications 1 Welding TO-247 long leads Power factor correction SMPS High frequency inverter/converter Figure 1. Internal schematic diagram Description This
9.24. Size:369K st
stgwa20hp65fb2.pdf 

STGWA20HP65FB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic
9.25. Size:1018K st
stgw15m120df3 stgwa15m120df3.pdf 

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
9.26. Size:955K st
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf 

STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode 3 1 3 2 1 D PAK Applications TO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-220FP TO-247 This IGBT utilize
9.27. Size:736K st
stgwa15s120df3.pdf 

STGW15S120DF3, STGWA15S120DF3 Trench gate field-stop IGBT, S series 1200 V, 15 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling 3 Low thermal resistance 2 1 Soft and fast recovery antiparallel diode TO-247 TO-247 long leads Applicat
9.28. Size:1574K st
stgwa60h65dfb.pdf 

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling
9.29. Size:321K st
stgwa20ih65df.pdf 

STGWA20IH65DF Datasheet Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft-commutation Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package
9.30. Size:512K st
stgwa40hp65fb2.pdf 

STGWA40HP65FB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien
9.31. Size:1459K st
stgwa80h65dfb.pdf 

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 3 2 2 1 1 VCE(sat) = 1.6 V (typ.) @ IC = 80 A Max247 TO-247 Tight parameter distribution TAB Safe par
9.32. Size:732K st
stgwa25h120df2.pdf 

STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247
9.33. Size:698K st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf 

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para
9.34. Size:719K st
stgwa40s120df3.pdf 

STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long l
9.35. Size:527K st
stgwa40h65dfb2.pdf 

STGWA40H65DFB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp
9.36. Size:315K st
stgwa100h65dfb2.pdf 

STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution TO-247 long leads Low thermal resistance
9.37. Size:757K st
stgwa40n120kd.pdf 

STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short
9.38. Size:562K st
stgw30m65df2 stgwa30m65df2.pdf 

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery
9.39. Size:594K st
stgw15h120df2 stgwa15h120df2.pdf 

STGW15H120DF2, STGWA15H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 VCE(sat) = 2.1 V @ IC = 15 A 2 3 1 2 1 5 s minimum short circuit withstand time at TJ = 150 C TO-247 TO-247 long leads Safe paralleling Low the
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