AFGHL50T65SQ - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AFGHL50T65SQ
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 268 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 11 nS
Coesⓘ - Выходная емкость, типовая: 42 pF
Qgⓘ - Общий заряд затвора, typ: 99 nC
Тип корпуса: TO247
Аналог (замена) для AFGHL50T65SQ
AFGHL50T65SQ Datasheet (PDF)
afghl50t65sq.pdf
Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified50 A, 650 V Maximum Junction Temperature: TJ = 175
afghl50t65sqd.pdf
Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified50 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V
afghl50t65sqdc.pdf
AFGHL50T65SQDC Hybrid IGBT 50 A, 650 VUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology,AFGHL50T65SQDC offers the optimum performance with both lowconduction and switching losses for high efficiency operations invarious applications, especially totem pole bridgeless PFC and www.onsemi.comInverter.Features50 A, 650 V
afghl75t65sqdc.pdf
IGBT Hybrid, Field Stop,Trench650 V, 75 A, TO247AFGHL75T65SQDCUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andwww.onsemi.comswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and
afghl40t65sqd.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified40 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V
afghl40t65sq.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified40 A, 650 V Maximum Junction Temperature: TJ = 175
afghl40t65spd.pdf
Field Stop Trench IGBT40 A, 650 VAFGHL40T65SPDDescriptionUsing the novel field stop 3rd generation IGBT technology,AFGHL40T65SPD offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, which provides 50 V higher blocking voltageVCES Eon VCE(Sat)and rugged high current switching relia
afghl75t65sqdt.pdf
Field Stop Trench IGBT650 V, 75 AAFGHL75T65SQDTUsing the novel field stop 4th generation IGBT technology and theStealth Diode technology, AFGHL75T65SQDT offers the optimumperformance with both low conduction and switching losses for a highwww.onsemi.comefficiency operation in various applications, especially totem polebridgeless PFC and DCDC block as well.75 A, 650 V Feature
afghl75t65sq.pdf
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Другие IGBT... STGWT30HP65FB , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , TGAN20N135FD , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2