AFGHL75T65SQDC - аналоги и описание IGBT

 

AFGHL75T65SQDC - аналоги, основные параметры, даташиты

Наименование: AFGHL75T65SQDC

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 19.2 nS

Coesⓘ - Выходная емкость, типовая: 289.4 pF

Тип корпуса: TO247

 Аналог (замена) для AFGHL75T65SQDC

- подбор ⓘ IGBT транзистора по параметрам

 

AFGHL75T65SQDC даташит

 ..1. Size:410K  onsemi
afghl75t65sqdc.pdfpdf_icon

AFGHL75T65SQDC

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and

 1.1. Size:255K  onsemi
afghl75t65sqdt.pdfpdf_icon

AFGHL75T65SQDC

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature

 2.1. Size:298K  onsemi
afghl75t65sq.pdfpdf_icon

AFGHL75T65SQDC

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.1. Size:238K  onsemi
afghl50t65sq.pdfpdf_icon

AFGHL75T65SQDC

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 50 A, 650 V Maximum Junction Temperature TJ = 175

Другие IGBT... AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , CRG75T60AK3HD , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU .

 

 

 

 

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