FGA40T65UQDF - аналоги, основные параметры, даташиты
Наименование: FGA40T65UQDF
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 231 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.33 V @25℃
tr ⓘ - Время нарастания типовое: 18 nS
Coesⓘ - Выходная емкость, типовая: 58 pF
Тип корпуса: TO3PN
Аналог (замена) для FGA40T65UQDF
- подбор ⓘ IGBT транзистора по параметрам
FGA40T65UQDF даташит
fga40t65uqdf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40t65shd.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40t65shdf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40n65smd.pdf
August 2014 FGA40N65SMD 650 V, 40 A Field Stop IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, Fairchild s new series of field stop 2nd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, induction heating, telecom, ESS
Другие IGBT... FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , RJH60F5DPQ-A0 , FGA5065ADF , FGA50S110P , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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