FGAF40S65AQ Даташит. Аналоги. Параметры и характеристики.
Наименование: FGAF40S65AQ
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 94 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.6 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 6.3 nS
Coesⓘ - Выходная емкость, типовая: 35 pF
Qgⓘ - Общий заряд затвора, typ: 75 nC
Тип корпуса: TO3PF
- подбор IGBT транзистора по параметрам
FGAF40S65AQ Datasheet (PDF)
fgaf40s65aq.pdf

Field Stop Trench IGBT650 V, 40 AFGAF40S65AQDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation of RC IGBTs offer the optimumperformance for PFC applications and welder where low conductionwww.onsemi.comand switching losses are essential.FeaturesVCES IC Maximum Junction Temperature: TJ = 175C650 V 40 A
fgaf40n60uf.pdf

IGBTFGAF40N60UFUltrafast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed
fgaf40n60ufd.pdf

IGBTFGAF40N60UFDUltrafast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe
fgaf40n60uf.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FGA40T65SHDF , FGA40T65UQDF , FGA5065ADF , FGA50S110P , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , MBQ40T65FDSC , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , FGB3056-F085 , FGB3236-F085 .
History: HGTP3N60B3D | IKFW90N60EH3
History: HGTP3N60B3D | IKFW90N60EH3



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2n3416 | bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793