Справочник IGBT. FGD3050G2V

 

FGD3050G2V - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGD3050G2V
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 150
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 500
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 10
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 32
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.1
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 2.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 1600
   Общий заряд затвора (Qg), typ, nC: 22
   Тип корпуса: DPAK

 Аналог (замена) для FGD3050G2V

 

 

FGD3050G2V Datasheet (PDF)

 ..1. Size:633K  onsemi
 fgd3050g2v.pdf

FGD3050G2V FGD3050G2V

FGD3050G2VEcoSPARK) 2 Ignition IGBT300 mJ, 500 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Device is Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1GATE High Current Ignition System Coil on Plug

 5.1. Size:752K  onsemi
 fgd3050g2.pdf

FGD3050G2V FGD3050G2V

www.onsemi.comFGD3050G2EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBTApplications Features SCIS Energy = 300mJ at TJ = 25C Automotive Ignition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications RoHS CompliantAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Ratings UnitsBVCER Collector to Emitter Breakdown

 9.1. Size:1340K  onsemi
 fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

FGD3050G2V FGD3050G2V

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:680K  onsemi
 fgd3040g2-f085v.pdf

FGD3050G2V FGD3050G2V

FGD3040G2-F085VEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1GATE Coil on Plug ApplicationR2MAXIMUM RATINGS (TJ = 25C unless otherwis

 9.3. Size:961K  onsemi
 fgd3040g2-f085c fgb3040g2-f085c.pdf

FGD3050G2V FGD3050G2V

FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit

Другие IGBT... FGB5N60UNDF , FGB7N60UNDF , FGD2736G3-F085 , FGD2736G3-F085V , FGD3040G2-F085C , FGB3040G2-F085C , FGD3040G2-F085V , FGD3050G2 , GT50JR22 , FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH .

 

 
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