FGD3050G2V - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: FGD3050G2V
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 500 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 32 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2.2 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 1600 nS
Qgⓘ - Общий заряд затвора, typ: 22 nC
Тип корпуса: DPAK
Аналог (замена) для FGD3050G2V
FGD3050G2V Datasheet (PDF)
fgd3050g2v.pdf
FGD3050G2VEcoSPARK) 2 Ignition IGBT300 mJ, 500 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Device is Pb-Free and are RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1GATE High Current Ignition System Coil on Plug
fgd3050g2.pdf
www.onsemi.comFGD3050G2EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBTApplications Features SCIS Energy = 300mJ at TJ = 25C Automotive Ignition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications RoHS CompliantAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Ratings UnitsBVCER Collector to Emitter Breakdown
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgd3040g2-f085v.pdf
FGD3040G2-F085VEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatures SCIS Energy = 300 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable RoHS CompliantCOLLECTORApplications Automotive Ignition Coil Driver CircuitsR1GATE Coil on Plug ApplicationR2MAXIMUM RATINGS (TJ = 25C unless otherwis
fgd3040g2-f085c fgb3040g2-f085c.pdf
FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2