Справочник IGBT. FGH40N65UFDTU

 

FGH40N65UFDTU Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGH40N65UFDTU
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 39 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qgⓘ - Общий заряд затвора, typ: 119 nC
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

FGH40N65UFDTU Datasheet (PDF)

 ..1. Size:480K  onsemi
fgh40n65ufdtu fgh40n65ufdtu-f085.pdfpdf_icon

FGH40N65UFDTU

IGBT - Field Stop650 V, 40 AFGH40N65UFDTU,FGH40N65UFDTU-F085Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for Automotive Chargers,VCES ICInverter, and other applications where low conduction and switchinglosses are essential.650 V 40 AFeaturesC High Current Capability Low Sa

 3.1. Size:723K  fairchild semi
fgh40n65ufd.pdfpdf_icon

FGH40N65UFDTU

March 2009FGH40N65UFDtm650V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40ASolar Inverter, UPS, SMPS and PFC applications where low High input impedanceconduction and switc

 7.1. Size:705K  fairchild semi
fgh40n60uf.pdfpdf_icon

FGH40N65UFDTU

July 2008FGH40N60UFtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and swit

 7.2. Size:723K  fairchild semi
fgh40n60ufd.pdfpdf_icon

FGH40N65UFDTU

April 2009FGH40N60UFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =1.8V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where low High input impedanceconduction and sw

Другие IGBT... FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 , FGH40N60SMDF-F085 , GT30F126 , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 .

History: IXGT15N120C | MUBW50-12A8

 

 
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