Справочник IGBT. FGH40T65SQD

 

FGH40T65SQD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGH40T65SQD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 238 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 4.8 nS
   Coesⓘ - Выходная емкость, типовая: 60 pF
   Qgⓘ - Общий заряд затвора, typ: 80 nC
   Тип корпуса: TO247

 Аналог (замена) для FGH40T65SQD

 

 

FGH40T65SQD Datasheet (PDF)

 ..1. Size:662K  onsemi
 fgh40t65sqd.pdf

FGH40T65SQD FGH40T65SQD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 5.1. Size:498K  1
 fgh40t65shdf.pdf

FGH40T65SQD FGH40T65SQD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features

 5.2. Size:3131K  onsemi
 fgh40t65spd-f085.pdf

FGH40T65SQD FGH40T65SQD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

 5.3. Size:1508K  onsemi
 fgh40t65shd-f155.pdf

FGH40T65SQD FGH40T65SQD

 5.4. Size:900K  onsemi
 fgh40t65shdf.pdf

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FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 5.5. Size:475K  onsemi
 fgh40t65sh.pdf

FGH40T65SQD FGH40T65SQD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

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