Аналоги FGH75T65SQDTL4. Основные параметры
Наименование: FGH75T65SQDTL4
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 375 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 20 nS
Coesⓘ - Выходная емкость, типовая: 155 pF
Тип корпуса: TO247-4
Аналог (замена) для FGH75T65SQDTL4
FGH75T65SQDTL4 даташит
fgh75t65sqdtl4.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc
fgh75t65sqdt.pdf
FGH75T65SQDT 650 V, 75 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ = 175oC Using novel field stop IGBT technology, ON semiconductor s new series of field stop 4th generation IGBTs offer he optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Curr
fgh75t65sqd.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature TJ
fgh75t65shdtl4.pdf
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 75 A Maximum Junc
Другие IGBT... FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , SGH80N60UFD , FGH75T65UPD-F155 , FGH75T65UPD-F085 , FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT .
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n2369a | 2sc733 | a933 transistor | d209l | irfb4321 | 2n333 | c3852 | irfp140







