Справочник IGBT. NGTB15N60S1EG

 

NGTB15N60S1EG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB15N60S1EG

Тип транзистора: IGBT + Diode

Маркировка: 15N60S1G

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc), W: 117

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 30

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5

Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 28

Емкость коллектора типовая (Cc), pf: 70

Общий заряд затвора (Qg), typ, nC: 88

Тип корпуса: TO220

Аналог (замена) для NGTB15N60S1EG

 

 

NGTB15N60S1EG Datasheet (PDF)

 ..1. Size:132K  onsemi
ngtb15n60s1eg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 3.1. Size:177K  onsemi
ngtb15n60s1.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 5.1. Size:176K  onsemi
ngtb15n60eg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N60EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.co

 7.1. Size:175K  onsemi
ngtb15n120lwg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 7.2. Size:172K  onsemi
ngtb15n120ihl.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 7.3. Size:185K  onsemi
ngtb15n120fl.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 7.4. Size:124K  onsemi
ngtb15n120ih.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 7.5. Size:185K  onsemi
ngtb15n120flwg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 7.6. Size:267K  onsemi
ngtb15n120fl2wg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 7.7. Size:175K  onsemi
ngtb15n120ihr.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 7.8. Size:175K  onsemi
ngtb15n120ihrwg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 7.9. Size:124K  onsemi
ngtb15n120ihwg.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 7.10. Size:233K  onsemi
ngtb15n120fl2.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 7.11. Size:1122K  onsemi
ngtb15n135ihrwg.pdf

NGTB15N60S1EG NGTB15N60S1EG

 7.12. Size:194K  onsemi
ngtb15n135ihr.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 7.13. Size:175K  onsemi
ngtb15n120l.pdf

NGTB15N60S1EG NGTB15N60S1EG

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

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