IXGH22N50BU1 Даташит. Аналоги. Параметры и характеристики.
Наименование: IXGH22N50BU1
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 500 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 44 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 30 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IXGH22N50BU1 Datasheet (PDF)
ixgh22n170.pdf
Advance Technical DataHigh Voltage IXGH 22N170 VCES = 1700 VIXGT 22N170 IC25 = 40 AIGBTVCE(sat) = 3.3 Vtfi(typ) = 290 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C44 ATO-247 AD (IXGH)IC90 TC = 90C22 AICM TC
ixgh28n90b.pdf
IXGH 28N90B VCES = 900 VHiPerFASTTM IGBTIXGT 28N90B IC25 = 51 AVCE(SAT) = 2.7 VPreliminary data sheettfi(typ) = 130 nsSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 MW 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C51 AIC110 TC = 110C28 ATO-268 (D3)ICM TC =
ixgh20n120b ixgt20n120b.pdf
IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM
ixgh24n60cd1.pdf
IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A
ixgh24n60c4d1.pdf
VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C Tab E VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter
ixgh25n100u1.pdf
Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI
ixgh24n120c3h1.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGH24N120C3H1IC25 = 48AVCE(sat) 4.2VHigh speed PT IGBTs fortfi(typ) = 110ns10-50kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C48 T
ixgh2n250.pdf
Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2
ixgh20n100 ixgt20n100.pdf
IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS
ixgh28n30b ixgt28n30b.pdf
IXGH 28N30BVCES = 300 VHiPerFASTTM IGBTIXGT 28N30BIC25 = 56 AVCE(sat)typ = 2.1 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C56 ATO-268IC90 TC = 90 C28 A(IXGT)ICM TC = 25 C, 1 ms 112 AGSSOA VGE= 15 V, TV
ixgh24n50bu1 ixgh24n60bu1.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBT500 V 48 A 2.3 V 80 nsIXGH24N50BU1with Diode600 V 48 A 2.5 V 80 nsIXGH24N60BU1Combi PackPreliminary dataTO-247 ADSymbol Test Conditions Maximum Ratings24N50 24N60C (TAB)VCES TJ = 25 C to 150 C 500 600 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate, C = Collector,E
ixgh25n120.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 VHigh speed IGBT IXGH 25 N120A 1200 V 50 A 4 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gate, C = Collector,IC90 TC = 90C25 AE = Emitter, TAB = CollectorI
ixgh25n160 ixgt25n160.pdf
VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110
ixgh20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgh28n60b3d1.pdf
Advance Technical InformationIXGH28N60B3D1 VCES = 600VPolarHVTM IGBTIC110 = 28A VCE(sat) 1.8V TO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V C (TAB)CEIC25 TC = 25C 66 AIC110 TC = 110C 28 AIF110 TC = 110C 10 A
ixgh28n30a ixgt28n30a.pdf
IXGH 28N30A VCES = 300 VHiPerFASTTM IGBTIXGT 28N30A IC25 = 56 AVCE(sat)typ = 1.85 Vtfi(typ) = 120 nsPreliminary dataTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VC(TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-268(IXGT)IC25 TC = 25 C56 AIC90 TC = 90 C28 A GEICM TC = 25 C, 1
ixgh20n120.pdf
VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A
ixgh24n170a.pdf
Preliminary Technical InformationHigh VoltageVCES = 1700VIXGH24N170AIGBTsIXGT24N170AIC25 = 24AVCE(sat) 6.0Vtfi(typ) = 40nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1700 V CEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 24 ATO-268 (IX
ixgh24n60c4.pdf
Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX
ixgh28n120b ixgt28n120b.pdf
IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A
ixgh28n60bd1 ixgt28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 8
ixgh24n170a ixgt24n170a.pdf
IXGH 24N170AVCES = 1700 VHigh VoltageIXGT 24N170AIC25 = 24 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 45 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C24 ATO-247 AD (IXGH)IC90 TC = 90C16 AICM
ixgh24n60b.pdf
IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 A
ixgh25n100au1.pdf
Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgh20n60-a ixgm20n60-a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 VHigh speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C40 AIC90 TC = 90C20 A TO-204 AE (IXGM)ICM TC = 25C, 1 ms
ixgh20n30.pdf
IXGH20N30VCES = 300 VHiPerFASTTM IGBTIC25 = 40 AVCE(sat)typ = 1.45 Vtfi(typ) = 180 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)IC25 TC = 25 C40 A CEIC90 TC = 90 C20 AICM TC = 25 C, 1 ms 80 AG = Gate, C = Collector,E = E
ixgh24n170.pdf
Advance Technical InformationVCES = 1700VHigh Voltage IXGH24N170IC25 = 50AIGBT IXGT24N170VCE(sat) 3.3Vtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGC C (TAB)VGES Continuous 20 VEVGEM Transient 30 VTO-268 (IXGT)IC25 TC = 25C 50 AIC9
ixgh28n60bd1.pdf
Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VCombi PackSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 80 A
ixgh24n60aui.pdf
VCES = 600 VIXGH 24N60AU1HiPerFASTTMIC25 = 48 AIXGH 24N60AU1SIGBT with DiodeVCE(sat) = 2.7 VCombi Packtfi = 275 nsTO-247 SMD(24N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VG C (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C48 A(24N60AU1)IC90 TC = 90C
ixgh20n120b.pdf
IXGH 20N120B VCES = 1200 VHigh Voltage IGBTIXGT 20N120B IC25 = 40 AVCE(sat) = 3.4 VPreliminary Data Sheet tfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC110 TC = 110C20 AICM
ixgh20n120 ixgt20n120.pdf
VCES = 1200 VIXGH 20N120IGBTIC25 = 40 AIXGT 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGDSIC25 TC = 25C40 AIC90 TC = 90C20 ATO-268 (IXGT)ICM TC = 25C, 1 ms 80 A
ixgh28n30 ixgt28n30.pdf
IXGH 28N30 VCES = 300 VHiPerFASTTM IGBTIXGT 28N30 IC25 = 56 AVCE(sat)typ = 1.6 Vtfi(typ) = 180 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VGEVGES Continuous 20 V(TAB)VGEM Transient 30 VIC25 TC = 25 C56 ATO-247 ADIC90 TC = 90 C28 AICM TC = 25 C, 1 ms 112 ASSOA VGE
ixgh25n250.pdf
Preliminary Technical InformationIXGH25N250 VCES = 2500 VHigh Voltage IGBTIXGT25N250 IC25 = 60 AFor Capacitor DischargeApplications IXGV25N250S VCE(sat) 2.9 VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 V CC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 2500 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transi
ixgh25n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
ixgh20n140c3h1.pdf
Advance Technical InformationVCES = 1400VGenX3TM 1400V IGBTs IXGH20N140C3H1IC100 = 20Aw/ Diode IXGT20N140C3H1VCE(sat) 5.0Vtfi(typ) = 32nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1400 VCC (Tab)EVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous
ixgh28n60b.pdf
Low VCE(sat) IGBT IXGH 28N60B VCES = 600 VIXGT 28N60B IC25 = 40 AVCE(sat) = 2.0 VSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C28 AICM TC = 25C, 1 ms 80 AC (TAB)SSOA VGE = 15 V,
ixgh24n60c.pdf
IXGH 24N60C VCES = 600 VHiPerFASTTM IGBTIXGT 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110
ixgh24n50b ixgh24n60b.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBTIXGH24N50B 500 V 48 A 2.3 V 80 ns600 V 48 A 2.5 V 80 nsIXGH24N60BPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD24N50 24N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C48 AG = Gate, C = Collector,IC90 TC = 9
ixgh20n100a3.pdf
Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V
ixgh24n120c3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGA24N120C3IC25 = 48AIXGH24N120C3VCE(sat) 4.2VIXGP24N120C3 High speed PT IGBTs fortfi(typ) = 110ns10-50kHz SwitchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGEVGES Continuous 20 V C (TAB)V
ixgh28n120bd1.pdf
High Voltage IGBT VCES = 1200VIXGH28N120BD1w/ Diode IC25 = 50AIXGT28N120BD1VCE(sat) 3.5Vtfi(typ) = 170nsTO-247AD (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VCE (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 50 AI
ixgh25n100.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
ixgh20n60bd1.pdf
IXGH 20N60BD1HiPerFASTTM IGBT VCES = 600 VIXGT 20N60BD1with Diode IC25 = 40 AVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C40 A(IXGH)IC90 TC = 90C20 A
ixgh24n170ah1.pdf
Preliminary Technical InformationHigh VoltageVCES = 1700VIXGH24N170AH1IGBTs w/DiodeIXGT24N170AH1IC25 = 24AVCE(sat) 6.0Vtfi(typ) = 40nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1700 V CEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 24 A
ixgh28n140b3h1.pdf
GenX3TM 1400V VCES = 1400VIXGH28N140B3H1IC110 = 28AIGBTs w/ DiodeIXGX28N140B3H1 VCE(sat) 3.60V IXGK28N140B3H1Avalanche RatedTO-247 (IXGH)GCTabESymbol Test Conditions Maximum RatingsPLUS247 (IXGX)VCES TJ = 25C to 150C 1400 VVCGR TJ = 25C to 150C, RGE = 1M 1400 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C
ixgh20n60b.pdf
VCES = 600 VIXGH 20N60BHiPerFASTTM IGBTIC25 = 40 AIXGT 20N60BVCE(sat)typ = 1.7 Vtfi(typ) = 100 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VG(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C40 ATO-247 AD (IXGH)IC90 TC = 90C20 AICM T
ixgh25n160.pdf
VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110
ixgh28n120b.pdf
IXGH 28N120B VCES = 1200 VHigh Voltage IGBTIXGT 28N120B IC25 = 50 AVCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C50 ATO-247 AD (IXGH)IC110 TC = 110C28 AICM TC = 25C, 1 ms 150 A
ixgh20n100.pdf
IXGH 20N100 VCES = 1000 VIGBTIXGT 20N100 IC25 = 40 AVCE(sat) = 3.0 Vtfi(typ) = 280 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 1000 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VEVGES Continuous 20 V(TAB)VGEM Transient 30 VTO-247 AD (IXGH)IC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 AS
Другие IGBT... IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IRG7IC28U , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 .
History: BG75B12UX3-I | IXGK35N120CD1 | IXDR30N120 | FGH40N60SMDF-F085 | IXGK35N120C | IXEH25N120 | RGTH60TS65
History: BG75B12UX3-I | IXGK35N120CD1 | IXDR30N120 | FGH40N60SMDF-F085 | IXGK35N120C | IXEH25N120 | RGTH60TS65
Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312