IHW30N120R5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IHW30N120R5
Тип транзистора: IGBT + Diode
Маркировка: H30MR5
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 330 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Coesⓘ - Выходная емкость, типовая: 55 pF
Qgⓘ - Общий заряд затвора, typ: 235 nC
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IHW30N120R5 Datasheet (PDF)
ihw30n120r5.pdf

IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
ihw30n120r3.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d
ihw30n120r2.pdf

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior
ihw30n120r2 rev1 5g.pdf

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: CM50RL-24NF | 2MBI150VA-120-50 | XD040Q120AT1S3 | IQGB150N120GA4 | APTGT100A120D1 | SKM50GAL12T4 | 2MBI150PC-140
History: CM50RL-24NF | 2MBI150VA-120-50 | XD040Q120AT1S3 | IQGB150N120GA4 | APTGT100A120D1 | SKM50GAL12T4 | 2MBI150PC-140



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