IRG4PC50SDPBF datasheet, аналоги, основные параметры
Наименование: IRG4PC50SDPBF 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 70 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.28 V @25℃
tr ⓘ - Время нарастания типовое: 30 nS
Coesⓘ - Выходная емкость, типовая: 250 pF
Тип корпуса: TO247
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Аналог (замена) для IRG4PC50SDPBF
- подбор ⓘ IGBT транзистора по параметрам
IRG4PC50SDPBF даташит
5.1. Size:167K international rectifier
irg4pc50s.pdf 
D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
5.2. Size:144K international rectifier
irg4pc50s-p.pdf 
D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
6.1. Size:153K international rectifier
irg4pc50u.pdf 
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3
6.2. Size:219K international rectifier
irg4pc50ud.pdf 
PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution an
6.3. Size:214K international rectifier
irg4pc50fd.pdf 
PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and high
6.4. Size:31K international rectifier
irg4pc50kd.pdf 
PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10 s @125 C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher
6.5. Size:121K international rectifier
irg4pc50k.pdf 
PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design
6.6. Size:152K international rectifier
irg4pc50f.pdf 
D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,
6.7. Size:635K international rectifier
irg4pc50upbf.pdf 
PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industr
6.8. Size:323K international rectifier
irg4pc50f-e.pdf 
PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standar
6.9. Size:159K international rectifier
irg4pc50w.pdf 
D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, I
6.10. Size:310K international rectifier
irg4pc50fpbf.pdf 
PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard
6.11. Size:687K international rectifier
irg4pc50udpbf.pdf 
PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V parameter distribution and higher efficiency than G Generation
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