IRG7PH35UDPBF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG7PH35UDPBF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 180 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Qgⓘ - Общий заряд затвора, typ: 85 nC
Тип корпуса: TO247
Аналог (замена) для IRG7PH35UDPBF
IRG7PH35UDPBF Datasheet (PDF)
irg7ph35udpbf irg7ph35ud-ep.pdf
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
irg7ph35ud1m.pdf
IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM
irg7ph35ud1.pdf
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
irg7ph35ud.pdf
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
irg7ph35ud1-ep.pdf
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2