IXGH30N30S - параметры транзистора, его аналоги, Даташиты

IXGH30N30S Даташит. Аналоги. Параметры и характеристики.

   Наименование: IXGH30N30S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 300 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6(max) V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 210 pF
   Тип корпуса: TO247SMD

Аналог (замена) для IXGH30N30S

- подбор IGBT транзистора по параметрам

IXGH30N30S Datasheet (PDF)

..1. Size:257K ixys
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5.1. Size:50K ixys
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IXGH30N30 VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 1.6 Vtfi = 180 nsPreliminary dataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VG = Gate, C = Collector,E = Emitter, TAB = CollectorIC25 TC = 25C 60 AIC90 TC = 90C 30

7.1. Size:576K ixys
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Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

7.2. Size:506K ixys
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Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

7.3. Size:583K ixys
ixgh30n60c2 ixgt30n60c2.pdf pdf_icon

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

7.4. Size:138K ixys
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HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 VIXGT 30N60BU1 IC25 = 60 Awith DiodeVCE(sat) = 1.8 VCombi Packtfi = 100 nsTO-268(IXGT)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AC (TAB)IC110 TC = 110C30 AGICM

7.5. Size:164K ixys
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VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

7.6. Size:215K ixys
ixgh30n60c3d1.pdf pdf_icon

GenX3TM 600V IGBTsVCES = 600VIXGH30N60C3D1w/ DiodeIC110 = 30AIXGT30N60C3D1VCE(sat) 3.0Vtfi(typ) = 47nsHigh-Speed PT IGBTs for40-100 kHz SwitchingTO-268 (IXGT)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VC (Tab)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXG

7.7. Size:181K ixys
ixgh30n120c3h1.pdf pdf_icon

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGH30N120C3H1IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs fortfi(typ) = 42ns10-50kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 4

7.8. Size:209K ixys
ixgh30n120b3.pdf pdf_icon

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

7.9. Size:159K ixys
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7.10. Size:580K ixys
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7.11. Size:213K ixys
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VCES = 1200VGenX3TM 1200V IGBT IXGH30N120B3D1IC110 = 30A IXGT30N120B3D1VCE(sat) 3.5Vtfi(typ) = 204nsHigh speed Low Vsat PTIGBTs 3-20 kHz switchingSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C30

7.12. Size:578K ixys
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Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

7.13. Size:269K ixys
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GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

7.14. Size:112K ixys
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IXGH 30N60BD1HiPerFASTTM IGBT VCES = 600 VIXGT 30N60BD1IC25 = 60 Awith DiodeVCE(sat) = 1.8 Vtfi(typ) = 100 nsSymbol Test Conditions Maximum RatingsTO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VEVGES Continuous 20 VC (TAB)VGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD(IXGH)IC90 TC = 90C30 AICM TC = 25C, 1

7.15. Size:52K ixys
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IXGH30N60B VCES = 600 VHiPerFASTTM IGBTIXGT30N60B IC25 = 60 AVCE(sat) = 1.8 Vtfi = 100 nsSymbol Test Conditions Maximum Ratings TO-247 AD(IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C60 AIC110 TC = 110C30 ATO-268 (D3)ICM TC = 25C, 1 ms 120 A(IXGT)SSOA

7.16. Size:278K ixys
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GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

7.17. Size:81K ixys
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Preliminary Technical InformationHigh-Gain IGBT VCES = 600VIXGH30N60B4IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88nsMedium-Speed PT Trench IGBTTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Ga

7.18. Size:600K ixys
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