TGAN30S160FD - аналоги и описание IGBT

 

TGAN30S160FD - аналоги, основные параметры, даташиты

Наименование: TGAN30S160FD

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.25 V @25℃

Coesⓘ - Выходная емкость, типовая: 58 pF

Тип корпуса: TO3PN

 Аналог (замена) для TGAN30S160FD

- подбор ⓘ IGBT транзистора по параметрам

 

TGAN30S160FD даташит

 ..1. Size:912K  trinnotech
tgan30s160fd.pdfpdf_icon

TGAN30S160FD

TGAN30S160FD Reverse Conducting Field Stop Trench IGBT Features 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ov

 6.1. Size:928K  trinnotech
tgan30s135fd.pdfpdf_icon

TGAN30S160FD

TGAN30S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwa

 8.1. Size:931K  trinnotech
tgan30n135fd1.pdfpdf_icon

TGAN30S160FD

TGAN30N135FD1 Field Stop Trench IGBT Features TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN30N135FD1 TO-3PN TGAN30N

 8.2. Size:1072K  trinnotech
tgan30n120fd.pdfpdf_icon

TGAN30S160FD

TGAN30N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN30N120FD TO-3PN TGAN30N120FD RoHS Abso

Другие IGBT... TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , BT40T60ANF , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR .

History: TA49119 | TA49048 | NGTB40N65IHL2

 

 

 

 

↑ Back to Top
.