TGAN40N135FD - аналоги, основные параметры, даташиты
Наименование: TGAN40N135FD
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1350 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 51 nS
Coesⓘ - Выходная емкость, типовая: 92 pF
Тип корпуса: TO3PN
Аналог (замена) для TGAN40N135FD
- подбор ⓘ IGBT транзистора по параметрам
TGAN40N135FD даташит
tgan40n135fd.pdf
TGAN40N135FD Field Stop Trench IGBT Features 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ovens Soft Switching Applicat
tgan40n120f2d.pdf
TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A
tgan40n120f2dw.pdf
TGAN40N120F2DW Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Welder, UPS, Inverter, Solar Device Package Marking Remark TGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHS Absolute Maximu
tgan40n110fd.pdf
TGAN40N110FD Field Stop Trench IGBT Features 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN40N110FD TO-3PN TGAN40N110FD RoHS Absolu
Другие IGBT... TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , RJP63F3DPP-M0 , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD .
History: XD075H065CX1S3 | SRE100N065FSU2D6 | RJH60D5DPK | SPT25N120T1T8TL
History: XD075H065CX1S3 | SRE100N065FSU2D6 | RJH60D5DPK | SPT25N120T1T8TL
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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