TGAN60N60F2DS datasheet, аналоги, основные параметры

Наименование: TGAN60N60F2DS  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 357 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.75 V @25℃

tr ⓘ - Время нарастания типовое: 46 nS

Coesⓘ - Выходная емкость, типовая: 160 pF

Тип корпуса: TO3PN

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 Аналог (замена) для TGAN60N60F2DS

- подбор ⓘ IGBT транзистора по параметрам

 

TGAN60N60F2DS даташит

 ..1. Size:967K  trinnotech
 tgan60n60f2ds.pdf pdf_icon

TGAN60N60F2DS

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim

 4.1. Size:1102K  trinnotech
 tgan60n60fd.pdf pdf_icon

TGAN60N60F2DS

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG

 6.1. Size:987K  trinnotech
 tgan60n65f2dr.pdf pdf_icon

TGAN60N60F2DS

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N

 6.2. Size:818K  trinnotech
 tgan60n65f2ds.pdf pdf_icon

TGAN60N60F2DS

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TGAN40N60F2D, TGAN40N60F2DS, TGAN40N65F2DR, TGAN40N65F2DS, TGAN40N90FD, TGAN40S135FD, TGAN40S160FD, TGAN50N90FD, NGD8201N, TGAN60N65F2DR, TGAN60N65F2DS, TGAN80N60F2DS, TGAN80N65F2DS, TGH40N120F2DR, TGH40N135FD, TGH40N60F2D, TGH40N65F2DR