Справочник IGBT. HCKW40N120H1

 

HCKW40N120H1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HCKW40N120H1
   Тип транзистора: IGBT + Diode
   Маркировка: K40H1201
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 484 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 90 nS
   Coesⓘ - Выходная емкость, типовая: 186 pF
   Qgⓘ - Общий заряд затвора, typ: 268 nC
   Тип корпуса: TO247

 Аналог (замена) для HCKW40N120H1

 

 

HCKW40N120H1 Datasheet (PDF)

 ..1. Size:1180K  cn vgsemi
 hckw40n120h1.pdf

HCKW40N120H1 HCKW40N120H1

HCKW40N120H1@Trench-FS Cool-Watt IGBTHCKW40N120H1 is a 1200V40A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technol

 4.1. Size:7213K  cn vgsemi
 hckw40n120cs2.pdf

HCKW40N120H1 HCKW40N120H1

HCKW40N120CS2@Trench-FS Cool-Watt IGBTHCKW40N120CS2 is a 1200V40A IGBT discrete with high speed soft switching ofTrench Field stop technology.The product with a anti-parallel diode,has the characteristics oflow V ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technolog

 4.2. Size:1182K  cn vgsemi
 hckw40n120bh1.pdf

HCKW40N120H1 HCKW40N120H1

HCKW40N120BH1@Trench-FS Cool-Watt IGBTHCKW40N120BH1 is a 1200V40A IGBT discrete with high speed soft switching ofTrench Field stop technology.The product with a anti-parallel diode,has the characteristics oflow V , high junction temperature and strong robustness. It is very suitable for productscesatwith high switching frequency. Features CoolWatt@ Trench-FS techn

 7.1. Size:6108K  cn vgsemi
 hckw40n65h2.pdf

HCKW40N120H1 HCKW40N120H1

HCKW40N65H2@Trench-FS Cool-Watt IGBTHCKW40N65H2 is a 650V40A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology

Другие IGBT... TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , TGD30N40P , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT .

 

 
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