MSG20T120FQC - аналоги, параметры транзистора

MSG20T120FQC даташит

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msg20t120fqc.pdf pdf_icon

MSG20T120FQC N-Channel IGBT Features Low Gate charge FS Technology VCE(sat) = 1.7V @ IC = 20A High Input Impedance Short circuit withstand time 10 s Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 30 GES T =25 C 40 C Collector curre I C T =

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msg20t65fle.pdf pdf_icon

MSG20T65FLE 650V Field stop Trench IGBT Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 1.6V @ IC = 20A High Input Impedance Short circuit withstand time 10 s Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 650 CES V Gate-emitter voltage V 30 G

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msg20t65fqs msg20t65fqt msg20t65fqe msg20t65fqc.pdf pdf_icon

MSG20T65FQS/T MSG20T65FQE/C Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) typ =1.6V,IC=20A and TC =25 C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 MSG20T MSG20T65FQT/ MSG20 Parameter Symbol Unit 65FQS MSG20T65FQE T65FQC Collector-Emmiter Voltage Vces 650 V 40 A Ic T=25 Col

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msg20t65hpc0 msg20t65hpe0 msg20t65hpt1.pdf pdf_icon

MSG20T65HPC0/E0/T1 Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) typ =1.6V,IC=20A and TC =25 C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Typ Unit Collector-Emmiter Voltage Vces 650 V 40 A Ic T=25 Collector Current-continuous T=100 20 A Collector Curren