MSG75C65HHC0 - аналоги и описание IGBT

MSG75C65HHC0 N-Channel IGBT Features Low gate charge Trench FS Technology, silicon carbide diode Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient RoHS product Applications Charging pile UPS Solar converters Absolute Ratings(Tc=25 ) Parameter Symbol Value Unit Collector-Emmiter Voltage V 650 V ce

MSG75T120FQW Features V = 1.85V@V = 15V,I = 75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Applications UPS AC & DC motor controls general purpose inverter . Absolute Ratings(Tc=25 ) Parameter Symbol Value Unit Collector-Emmiter Voltage V 1200 V ce I 115 A C Collector Current-continuous T=25

MSG75T65FQC N-Channel IGBT Features Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage VCE(sat),typ=1.7V Applications General purpose inverter Induction heating(IH) UPS Order Message Order codes Marking Package MSG75T65FQC MSG75T65FQC TO-247 Absolute Ratings(Tc=25 ) Value Parameter Symbol Unit MSG75T65FQC Collector

MSG75T65HHC0 N-Channel IGBT Features Low gate charge Short circuit withstand time 10 uS Saturation voltage VCE(sat),typ=1.7V Applications General purpose inverter Induction heating(IH) UPS Order Message Order codes Marking Package MSG75T65HHC0 MSG75T65HHC0 TO-247 Absolute Ratings(Tc=25 ) Parameter Symbol Value Unit Collector-Emmiter Voltage V 650 V ce