Справочник IGBT. IXGH32N60CD1

 

IXGH32N60CD1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IXGH32N60CD1

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Максимальный постоянный ток коллектора (Ic): 60

Максимальная температура перехода (Tj): 175

Время нарастания: 55

Тип корпуса: TO247

Аналог (замена) для IXGH32N60CD1

 

 

IXGH32N60CD1 Datasheet (PDF)

0.1. ixgh32n60cd1.pdf Size:160K _ixys

IXGH32N60CD1
IXGH32N60CD1

IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D

4.1. ixgh32n60c.pdf Size:81K _ixys

IXGH32N60CD1
IXGH32N60CD1

IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =

 5.1. ixgh32n60a.pdf Size:125K _ixys

IXGH32N60CD1
IXGH32N60CD1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

5.2. ixgh32n60bu1.pdf Size:137K _ixys

IXGH32N60CD1
IXGH32N60CD1

IXGH 32N60BU1 VCES = 600 VHiPerFASTTM IGBTIC25 = 60 Awith DiodeVCE(sat) = 2.3 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EG = Gate, C = Collector,IC25 TC = 25C60 AE = Emitter, TAB = CollectorIC90 TC = 90C32 AIC

 5.3. ixgh32n60bd1.pdf Size:125K _ixys

IXGH32N60CD1
IXGH32N60CD1

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

5.4. ixgh32n60b.pdf Size:34K _ixys

IXGH32N60CD1
IXGH32N60CD1

HiPerFASTTM IGBT IXGH32N60B VCES = 600 VIC25 = 60 AVCE(sat) = 2.5 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C60 A EIC90 TC = 90C32 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 120 AE = Emitter, TAB = Col

Другие IGBT... IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 , IXGH32N60BU1 , IXGH32N60C , GT30J322 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 , IXGH40N30 , IXGH40N30A , IXGH40N30B .

 

 
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