Справочник IGBT. SRE50N120FSUDAT

 

SRE50N120FSUDAT - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SRE50N120FSUDAT
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 55 nS
   Coesⓘ - Выходная емкость, типовая: 215 pF
   Qgⓘ - Общий заряд затвора, typ: 410 nC
   Тип корпуса: TO247

 Аналог (замена) для SRE50N120FSUDAT

 

 

SRE50N120FSUDAT Datasheet (PDF)

 ..1. Size:1335K  sanrise-tech
 sre50n120fsuda.pdf

SRE50N120FSUDAT SRE50N120FSUDAT

Datasheet 50A 1200V Trench Fieldstop IGBT with FRD SRE50N120FSUDA General Description Symbol The SRE50N120FSUDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. Figure 1 Symbol of SRE50N120FSUDA The SRE50N120FSUDA is

 1.1. Size:1167K  sanrise-tech
 sre50n120fsud9.pdf

SRE50N120FSUDAT SRE50N120FSUDAT

Datasheet 50A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE50N120FSUD9 General Description Symbol The SRE50N120FSUD9 is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, industrial power supplies, etc. The SRE50N120

 2.1. Size:1295K  sanrise-tech
 sre50n120fsus7.pdf

SRE50N120FSUDAT SRE50N120FSUDAT

Datasheet 50A 1200V Trench Fieldstop IGBT with SiC SBD SRE50N120FSUS7 General Description Symbol The SRE50N120FSUS7 is a Field Stop Trench CIGBT with anti-parallel SiC SBD, which offers low switching losses, high energy efficiency and Ghigh avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. E1 E2The SRE50N120FSUS7 is available in TO-2

 8.1. Size:994K  sanrise-tech
 sre50n065fsud6.pdf

SRE50N120FSUDAT SRE50N120FSUDAT

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 8.2. Size:993K  sanrise-tech
 sre50n065fsu.pdf

SRE50N120FSUDAT SRE50N120FSUDAT

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE50N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

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