Справочник IGBT. SRE60N120FSSDATP

 

SRE60N120FSSDATP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SRE60N120FSSDATP
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 650 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.3 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 61 nS
   Coesⓘ - Выходная емкость, типовая: 257 pF
   Qgⓘ - Общий заряд затвора, typ: 131 nC
   Тип корпуса: TO247PLUS

 Аналог (замена) для SRE60N120FSSDATP

 

 

SRE60N120FSSDATP Datasheet (PDF)

 ..1. Size:1400K  sanrise-tech
 sre60n120fssda.pdf

SRE60N120FSSDATP SRE60N120FSSDATP

Datasheet 60A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE60N120FSSDA General Description Symbol TheSRE60N120FSSDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. The SRE60N120FSSDA is available in TO-247

 8.1. Size:895K  sanrise-tech
 sre60n065fsud6.pdf

SRE60N120FSSDATP SRE60N120FSSDATP

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUD6 General Description Symbol The SRE60N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUD6 package is TO-247. Figure 1 Symbol of SRE60N

 8.2. Size:1144K  sanrise-tech
 sre60n065fsu2s8.pdf

SRE60N120FSSDATP SRE60N120FSSDATP

Datasheet 60A 650V Trench Fieldstop IGBT with SiC SBD SRE60N065FSU2S8 General Description Symbol The SRE60N065FSU2S8 is a Field Stop Trench IGBT with SiC SBD, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSU2S8 package is TO-247. Figure 1 Symbol of SRE60N065FSU2S8 Features

 8.3. Size:546K  sanrise-tech
 sre60n065fsudg.pdf

SRE60N120FSSDATP SRE60N120FSSDATP

Datasheet 60A 650V Trench Fieldstop IGBT with anti-parallel diode SRE60N065FSUDG General Description Symbol The SRE60N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE60N065FSUDG package is TO-247. Figure 1 Symbol of SRE60N06

 8.4. Size:897K  sanrise-tech
 sre60n065fsu.pdf

SRE60N120FSSDATP SRE60N120FSSDATP

Datasheet 60A 650V Trench Fieldstop IGBT SRE60N065FSU General Description Symbol The SRE60N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE60N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE60N065

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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