SRE80N065FSU - аналоги и описание IGBT

 

SRE80N065FSU - аналоги, основные параметры, даташиты

Наименование: SRE80N065FSU

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 90 nS

Coesⓘ - Выходная емкость, типовая: 350 pF

Тип корпуса: TO247

 Аналог (замена) для SRE80N065FSU

- подбор ⓘ IGBT транзистора по параметрам

 

SRE80N065FSU даташит

 ..1. Size:1024K  sanrise-tech
sre80n065fsu.pdfpdf_icon

SRE80N065FSU

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 0.1. Size:961K  sanrise-tech
sre80n065fsud8.pdfpdf_icon

SRE80N065FSU

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 0.2. Size:1290K  sanrise-tech
sre80n065fsu2.pdfpdf_icon

SRE80N065FSU

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU2 package is TO-247. E Features High Breakdown Voltage to 650V Advanced Trench Fields

 0.3. Size:1336K  sanrise-tech
sre80n065fsu2db.pdfpdf_icon

SRE80N065FSU

Datasheet 80A 650V Trench Fieldstop IGBT with FRD SRE80N065FSU2DB General Description Symbol The SRE80N065FSU2DB is a Field Stop Trench C IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, G Converter, etc. The SRE80N065FSU2DB package is TO-247-4. E1 E2 Features High Breakd

Другие IGBT... SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 , SGT40N60NPFDPN , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S .

History: STGWA20M65DF2 | TA49015 | SHDG1025 | NGTB40N65IHL2 | TA49119 | TA49048 | TA49016

 

 

 

 

↑ Back to Top
.