SRE80N065FSUD6 datasheet, аналоги, основные параметры

Наименование: SRE80N065FSUD6  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 375 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 90 nS

Coesⓘ - Выходная емкость, типовая: 350 pF

Тип корпуса: TO247

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 Аналог (замена) для SRE80N065FSUD6

- подбор ⓘ IGBT транзистора по параметрам

 

SRE80N065FSUD6 даташит

 ..1. Size:1006K  sanrise-tech
 sre80n065fsud6.pdf pdf_icon

SRE80N065FSUD6

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD6 General Description Symbol The SRE80N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD6 package is TO-247. Features Figure 1 Symbol o

 1.1. Size:961K  sanrise-tech
 sre80n065fsud8.pdf pdf_icon

SRE80N065FSUD6

Datasheet 80A 650V Trench Fieldstop IGBT with anti-parallel diode SRE80N065FSUD8 General Description Symbol The SRE80N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE80N065FSUD8 package is TO-247. Features Figure 1 Symbol o

 2.1. Size:1024K  sanrise-tech
 sre80n065fsu.pdf pdf_icon

SRE80N065FSUD6

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU General Description Symbol The SRE80N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU package is TO-247. Features E High Breakdown Voltage to 650V Figure 1 Symbol of SRE80N065F

 2.2. Size:1290K  sanrise-tech
 sre80n065fsu2.pdf pdf_icon

SRE80N065FSUD6

Datasheet 80A 650V Trench Fieldstop IGBT SRE80N065FSU2 General Description Symbol The SRE80N065FSU2 is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. G The SRE80N065FSU2 package is TO-247. E Features High Breakdown Voltage to 650V Advanced Trench Fields

ПОКАЗАТЬ ЕЩЁ

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