Справочник IGBT. OST15N65DRF

 

OST15N65DRF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST15N65DRF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 36 nS
   Coesⓘ - Выходная емкость, типовая: 80 pF
   Тип корпуса: TO252
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OST15N65DRF Datasheet (PDF)

 ..1. Size:768K  oriental semi
 ost15n65drf.pdf pdf_icon

OST15N65DRF

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:718K  oriental semi
 ost15n65krf.pdf pdf_icon

OST15N65DRF

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:735K  oriental semi
 ost15n65frf.pdf pdf_icon

OST15N65DRF

OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:777K  oriental semi
 ost15n65prf.pdf pdf_icon

OST15N65DRF

OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ПОКАЗАТЬ ЕЩЁ

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History: MMG50A120B7HN | IRG4PC30U | SSG55N60M | OST80N65HMF | OST75N65HSXF | CPV364M4KPBF

 

 
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