OST40N120HEMF - аналоги и описание IGBT

 

OST40N120HEMF - аналоги, основные параметры, даташиты

Наименование: OST40N120HEMF

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 536 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃

tr ⓘ - Время нарастания типовое: 54 nS

Coesⓘ - Выходная емкость, типовая: 192 pF

Тип корпуса: TO247

 Аналог (замена) для OST40N120HEMF

- подбор ⓘ IGBT транзистора по параметрам

 

OST40N120HEMF даташит

 ..1. Size:617K  oriental semi
 ost40n120hemf.pdf pdf_icon

OST40N120HEMF

OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 4.1. Size:775K  oriental semi
 ost40n120hmf.pdf pdf_icon

OST40N120HEMF

OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 8.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N120HEMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 8.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N120HEMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , TGPF30N43P , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF .

History: FB20R06W1E3-B11

 

 

 

 

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