Справочник IGBT. OST40N120HEMF

 

OST40N120HEMF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST40N120HEMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 536 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 54 nS
   Coesⓘ - Выходная емкость, типовая: 192 pF
   Qgⓘ - Общий заряд затвора, typ: 216 nC
   Тип корпуса: TO247
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OST40N120HEMF Datasheet (PDF)

 ..1. Size:617K  oriental semi
 ost40n120hemf.pdf pdf_icon

OST40N120HEMF

OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 4.1. Size:775K  oriental semi
 ost40n120hmf.pdf pdf_icon

OST40N120HEMF

OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 8.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N120HEMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 8.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N120HEMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

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Другие IGBT... OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , STGW60V60DF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF .

History: SGM100HF12A1TFDT4 | FGW25N120VD | MM75G3T65B | TGH40N65F2DS | HM20N120TB | IRGI4086 | YGW15N120T3

 

 
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