Справочник IGBT. OST40N65HMF

 

OST40N65HMF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST40N65HMF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 78 nS
   Coesⓘ - Выходная емкость, типовая: 119 pF
   Тип корпуса: TO247
 

 Аналог (замена) для OST40N65HMF

   - подбор ⓘ IGBT транзистора по параметрам

 

OST40N65HMF Datasheet (PDF)

 ..1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N65HMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N65HMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:770K  oriental semi
 ost40n65hemf.pdf pdf_icon

OST40N65HMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.1. Size:717K  oriental semi
 ost40n65kmf.pdf pdf_icon

OST40N65HMF

OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , IRG4PC50U , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F .

History: MIXA40WB1200TED | APT15GT120BRDQ1G | STGF10H60DF | NGTB15N60EG | IXGP20N120A3 | SGM50HF12A1TFDT4 | MIEB101W1200DPFEH

 

 
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