Справочник IGBT. OST40N65HMF

 

OST40N65HMF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST40N65HMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 78 nS
   Coesⓘ - Выходная емкость, типовая: 119 pF
   Qgⓘ - Общий заряд затвора, typ: 80 nC
   Тип корпуса: TO247

 Аналог (замена) для OST40N65HMF

 

 

OST40N65HMF Datasheet (PDF)

 ..1. Size:704K  oriental semi
 ost40n65hmf.pdf

OST40N65HMF OST40N65HMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:701K  oriental semi
 ost40n65hxf.pdf

OST40N65HMF OST40N65HMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:770K  oriental semi
 ost40n65hemf.pdf

OST40N65HMF OST40N65HMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 6.1. Size:717K  oriental semi
 ost40n65kmf.pdf

OST40N65HMF OST40N65HMF

OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:742K  oriental semi
 ost40n65pmf.pdf

OST40N65HMF OST40N65HMF

OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

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