Справочник IGBT. OST60N65HSMF

 

OST60N65HSMF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST60N65HSMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 375
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 52
   Емкость коллектора типовая (Cc), pf: 175
   Общий заряд затвора (Qg), typ, nC: 123
   Тип корпуса: TO247

 Аналог (замена) для OST60N65HSMF

 

 

OST60N65HSMF Datasheet (PDF)

 ..1. Size:606K  oriental semi
 ost60n65hsmf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:838K  oriental semi
 ost60n65hszf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.2. Size:731K  oriental semi
 ost60n65hsxf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:789K  oriental semi
 ost60n65h4ewf.pdf

OST60N65HSMF OST60N65HSMF

 5.2. Size:817K  oriental semi
 ost60n65h4emf.pdf

OST60N65HSMF OST60N65HSMF

 5.3. Size:733K  oriental semi
 ost60n65hxf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.4. Size:873K  oriental semi
 ost60n65hemf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.5. Size:746K  oriental semi
 ost60n65hmf.pdf

OST60N65HSMF OST60N65HSMF

OST60N65HMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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