OST75N65HM2F
Даташит. Аналоги. Параметры и характеристики.
Наименование: OST75N65HM2F
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 395
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 650
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
90
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.5
V @25℃
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 99
nS
Coesⓘ - Выходная емкость, типовая: 177
pF
Тип корпуса:
TO247
- подбор IGBT транзистора по параметрам
OST75N65HM2F
Datasheet (PDF)
..1. Size:805K oriental semi
ost75n65hm2f.pdf 

OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
4.1. Size:768K oriental semi
ost75n65hmf.pdf 

OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.1. Size:741K oriental semi
ost75n65hnf.pdf 

OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.3. Size:741K oriental semi
ost75n65htnf.pdf 

OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:768K oriental semi
ost75n65hsxf.pdf 

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:788K oriental semi
ost75n65hemf.pdf 

OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:747K oriental semi
ost75n65hsvf.pdf 

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:751K oriental semi
ost75n65hszf.pdf 

OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.8. Size:608K oriental semi
ost75n65hem2f.pdf 

OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
5.9. Size:822K oriental semi
ost75n65hzf.pdf 

OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.10. Size:801K oriental semi
ost75n65hsnf.pdf 

OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.11. Size:772K oriental semi
ost75n65hsmf.pdf 

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.12. Size:777K oriental semi
ost75n65hlmf.pdf 

OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Другие IGBT... OST60N65HSMF
, OST60N65HSXF
, OST60N65HSZF
, OST60N65HXF
, OST75N120HM2F
, OST75N65HEM2F
, OST75N65HEMF
, OST75N65HLMF
, IKW40N65WR5
, OST75N65HMF
, OST75N65HNF
, OST75N65HSMF
, OST75N65HSNF
, OST75N65HSVF
, OST75N65HSXF
, OST75N65HSZF
, OST75N65HTNF
.
History: NCE30TD120UT
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