Справочник IGBT. OST75N65HM2F

 

OST75N65HM2F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST75N65HM2F
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 395
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 90
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 99
   Емкость коллектора типовая (Cc), pf: 177
   Общий заряд затвора (Qg), typ, nC: 115
   Тип корпуса: TO247

 Аналог (замена) для OST75N65HM2F

 

 

OST75N65HM2F Datasheet (PDF)

 ..1. Size:805K  oriental semi
ost75n65hm2f.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:768K  oriental semi
ost75n65hmf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:741K  oriental semi
ost75n65hnf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:777K  oriental semi
ost75n65hswf.pdf

OST75N65HM2F OST75N65HM2F

 5.3. Size:741K  oriental semi
ost75n65htnf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.4. Size:768K  oriental semi
ost75n65hsxf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.5. Size:788K  oriental semi
ost75n65hemf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.6. Size:747K  oriental semi
ost75n65hsvf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.7. Size:751K  oriental semi
ost75n65hszf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.8. Size:608K  oriental semi
ost75n65hem2f.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 5.9. Size:822K  oriental semi
ost75n65hzf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.10. Size:801K  oriental semi
ost75n65hsnf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.11. Size:772K  oriental semi
ost75n65hsmf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.12. Size:777K  oriental semi
ost75n65hlmf.pdf

OST75N65HM2F OST75N65HM2F

OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

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