OST75N65HTNF - аналоги, основные параметры, даташиты
Наименование: OST75N65HTNF
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 395 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 198 nS
Coesⓘ - Выходная емкость,
типовая: 300 pF
Тип корпуса: TO247
Аналог (замена) для OST75N65HTNF
- подбор ⓘ IGBT транзистора по параметрам
OST75N65HTNF даташит
..1. Size:741K oriental semi
ost75n65htnf.pdf 
OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.1. Size:741K oriental semi
ost75n65hnf.pdf 
OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.3. Size:768K oriental semi
ost75n65hsxf.pdf 
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:788K oriental semi
ost75n65hemf.pdf 
OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:805K oriental semi
ost75n65hm2f.pdf 
OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:747K oriental semi
ost75n65hsvf.pdf 
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:751K oriental semi
ost75n65hszf.pdf 
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.8. Size:608K oriental semi
ost75n65hem2f.pdf 
OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
5.9. Size:822K oriental semi
ost75n65hzf.pdf 
OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.10. Size:801K oriental semi
ost75n65hsnf.pdf 
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.11. Size:768K oriental semi
ost75n65hmf.pdf 
OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.12. Size:772K oriental semi
ost75n65hsmf.pdf 
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.13. Size:777K oriental semi
ost75n65hlmf.pdf 
OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
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